New 5.2 kV Extra Fast Recovery Diode for IGBT and IGCT Applications
نویسندگان
چکیده
A new class of high power extra fast recovery diode, optimised for IGBT and IGCT applications is presented. These diodes incorporate a novel p-emitter structure and lifetime control to offer real improvements in dynamic performance, combined with improved safe operating area and high reliability. Test data is presented, along with projections for a range of commercial products in industry standard pressure contact housings from 47 mm to 75 mm.
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تاریخ انتشار 2005